cmt2n7002 s mall s ignal mosfet 2010/03/23 rev. 1.9 champion microelectronic corporation page 1 general description features this n-channel enhancement mode field effect transistor is produced using high cell density, dmos technology. these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. it can be used in most applications requiring up to 115ma dc and can deliver pulsed currents up to 800ma. this product is particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. ? high density cell design for low r ds(on) ? voltage controlled small signal switch ? rugged and reliable ? high saturation current capability pin configuration symbol sot-23, sot-323 sot-363 top view top view d2 g1 s1 1 3 2 gate drain source s2 g2 d1 d s g n-channel mosfet ordering information part number package cmt2n7002 sot-23 cmt2n7002g* sot-23 cmt2n7002wg* sot-323 CMT2N7002DWG* sot-363 cmt2n7002x* sot-23 cmt2n7002wx* sot-323 cmt2n7002dwx* sot-363 * note : g : suffix for pb free product w: suffix for package sot-323 x : suffix for halogen free product absolute maximum ratings rating symbol value unit drain source voltage v dss 60 v drain-gate voltage (r gs = 1.0m ? ) v dgr 60 v drain to current continuous pulsed i d i dm 115 800 ma gate-to-source voltage continue non-repetitive v gs v gsm 20 40 v v total power dissipation derate above 25 p d 225 1.8 mw mw/ single pulse drain-to-source avalanche energy t j = 25 (v dd = 50v, v gs = 10v, i as = 0.8a, l = 30mh, r g = 25 ? ) e as 9.6 mj operating and storage te mperature range t j , t stg -55 to 150 thermal resistance junction to ambient ja 417 /w maximum lead temperature for soldering pu rposes, 1/8? from case for 10 seconds t l 300
cmt2n7002 s mall s ignal mosfet 2010/03/23 rev. 1.9 champion microelectronic corporation page 2 electrical characteristics unless otherwise specified, t j = 25 . cmt2n7002 characteristic symbol min typ max units drain-source breakdown voltage (v gs = 0 v, i d = 10 a) v (br)dss 60 v drain-source leakage current (v ds = 60 v, v gs = 0 v) (v ds = 60 v, v gs = 0 v, t j = 125 ) i dss 1.0 0.5 a ma gate-source leakage current-forward (v gsf = 20 v) i gssf 100 na gate-source leakage current-reverse (v gsf = -20 v) i gssf -100 na gate threshold voltage * (v ds = v gs , i d = 250 a) v gs(th) 1.0 2.5 v on-state drain current (v ds R 2.0 v ds(on) , v gs = 10v) i d(on) 500 ma static drain-source on-resistance * (v gs = 10 v, i d = 0.5a) (v gs = 10 v, i d = 0.5a, t j = 125 ) (v gs = 5.0 v, i d = 50ma) (v gs = 5.0 v, i d = 50ma, t j = 125 ) r ds(on) 7.5 13.5 7.5 13.5 ? drain-source on-voltage * (v gs = 10 v, i d = 0.5a) (v gs = 5.0 v, i d = 50ma) v ds(on) 3.75 0.375 v forward transconductance (v ds R 2.0 v ds(on) , i d = 200ma) * g fs 80 mmhos input capacitance c iss 50 pf output capacitance c oss 25 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 5.0 pf turn-on delay time t d(on) 20 ns turn-off delay time (v dd = 25 v, i d = 500 ma, v gen = 10 v, r g = 25 ? , r l = 50 ? ) * t d(off) 40 ns diode forward on-voltage (is = 115 ma, vgs = 0v) v sd -1.5 v source current continuous (body diode) i s -115 ma source current pulsed i sm -800 ma * pulse test: pulse width Q 300 s, duty cycle Q 2%
cmt2n7002 s mall s ignal mosfet 2010/03/23 rev. 1.9 champion microelectronic corporation page 3 typical electrical characteristics figure 5. capacitance
cmt2n7002 s mall s ignal mosfet 2010/03/23 rev. 1.9 champion microelectronic corporation page 4 package dimension sot-23 sot-323
cmt2n7002 s mall s ignal mosfet 2010/03/23 rev. 1.9 champion microelectronic corporation page 5 sot-363
cmt2n7002 s mall s ignal mosfet 2010/03/23 rev. 1.9 champion microelectronic corporation page 6 important notice champion microelectronic corporation (cmc) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its cust omers to obtain the latest version of relevant inform ation to verify, before placing orders, that the information being relied on is current. a few applications using integrated circuit products may involv e potential risks of death, personal injury, or severe property or environmental damage. cmc integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. us e of cmc products in such applications is understood to be fully at the risk of the cust omer. in order to minimize risks associated with the customer?s applications, th e customer should provide adequate design and operating safeguards. hsinchu headquarter sales & marketing 5f, no. 11, park avenue ii, science-based industrial park, hsinchu city, taiwan 21f., no. 96, sec. 1, sintai 5th rd., sijhih city, taipei county 22102, taiwan, r.o.c. t e l : +886-3-567 9979 t e l : +886-2-2696 3558 f a x : +886-3-567 9909 f a x : +886-2-2696 3559
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